■ GaN on SiC HEMT Technology
■ POUT-PK = 1000W @ 32us/2% / 50V
■ 1.025-1.150GHz Instantaneous Operating Frequency Range
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=1.340″ (34.04mm), L=0.385″ (9.78mm)
■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
| Integra Technologies, Inc. | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | IGN1012S1000 |
| Product Name | GaN L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |
