Integra Technologies, Inc. GaN C-Band Radar Transistor IGN3842M130

Description
■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/2%/50V ■ 3.8-4.2GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.32mm), L=0.230′ (5.84mm) ■ Package Size: W=0.390′ (9.91mm), L=0.230′ (5.84mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture
  • GaN C-Band Radar Transistor - IGN3842M130 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/2%/50V ■ 3.8-4.2GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.32mm), L=0.230′ (5.84mm) ■ Package Size: W=0.390′ (9.91mm), L=0.230′ (5.84mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture

Suppliers

Company
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Description
Supplier Links
GaN C-Band Radar Transistor - IGN3842M130 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
GaN C-Band Radar Transistor
IGN3842M130
GaN C-Band Radar Transistor IGN3842M130
■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/2%/50V ■ 3.8-4.2GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.32mm), L=0.230′ (5.84mm) ■ Package Size: W=0.390′ (9.91mm), L=0.230′ (5.84mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture

■ GaN on SiC HEMT Technology
■ POUT-PK = 130W @ 100us/2%/50V
■ 3.8-4.2GHz Instantaneous Operating Frequency Range
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.800″ (20.32mm), L=0.230″ (5.84mm)
■ Package Size: W=0.390″ (9.91mm), L=0.230″ (5.84mm)
■ 100% High Power RF Tested in Broadband RF Test Fixture

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category RF MOSFET Transistors
Product Number IGN3842M130
Product Name GaN C-Band Radar Transistor
Transistor Technology / Material GaN
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