The high power pulsed transistor device part number IB0912L70 is
designed for systems operating over the instantaneous bandwidth of
960-1215 . While operating in class C mode under 444x (7us on,
6us off), 22.7% pulsing conditions and Vcc=44V, this common base
device supplies a minimum of 70 watts of peak pulse power. It utilizes a
low loss internal input impedance matching structure to yield maximum
device gain and to ease the implementation of external matching
circuitry. The new generation bipolar transistor geometry utilizes a gold
metallization system to achieve maximum reliability. Emitter ballast
resistance is incorporated on the active cell for optimum thermal
distribution and maximum reliability. All devices are 100% screened for
large signal RF parameters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB0912L70 |
| Product Name | BiPolar L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |
