The high power pulsed radar transistor device part number IB3135MH100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 100 watts of peak pulse power under the conditions of 100ƒÝs pulse width and 10% duty cycle over the frequency range of 3.1-3.5 GHz. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters. The test fixture includes a passive amplitude sloping network to insure that the device is not overdriven as the operating frequency decreases. This device is rated for a peak output power level of PPEAK = 100W @ 10% duty factor. This corresponds to an average power PAVG = 10W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB3135MH100 |
| Product Name | BiPolar S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
