■ GaN on SiC HEMT Technology
■ POUT-PK ≥ 160W @ 100us/10%/50V
■ 420 to 450 Operating Frequency
■ Internal Input Impedance Pre-matched Device
■ No Internal Output Match for Efficiency Optimization
■ Depletion Mode Device - Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.800″ (40.60mm), L=0.400″ (20.30mm)
■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
| Integra Technologies, Inc. | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | IGN450M160 |
| Product Name | GaN UHF Transistor |
| Transistor Technology / Material | GaN |
