The high power pulsed transistor part number IB2856S30 is designed to operate in class C mode. This common base device supplies a minimum of 30 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state amplifiers. Designed to be used as a driver device for IB2856S250 or as a stand-alone device. This device is rated for a peak output power level of PPEAK = 30W @ 3% duty factor. This corresponds to an average power PAVG = 0.9W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB2856S30 |
| Product Name | ISM Pulse Transistor |
| Transistor Technology / Material | GaN |
