Integra Technologies, Inc. LDMOS L-Band Avionics Transistor ILD1011M550HV

Description
The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 . Operating at 50ìs, 2% pulse conditions this LDMOS FET device supplies a minimum of 550 watts of power across the instantaneous operating bandwidth of 1030-1090 . All devices are 100% screened for large signal RF parameters.
Description
The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 . Operating at 50ìs, 2% pulse conditions this LDMOS FET device supplies a minimum of 550 watts of power across the instantaneous operating bandwidth of 1030-1090 . All devices are 100% screened for large signal RF parameters.

Suppliers

Company
Product
Description
Supplier Links
LDMOS L-Band Avionics Transistor - ILD1011M550HV - Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS L-Band Avionics Transistor
ILD1011M550HV
LDMOS L-Band Avionics Transistor ILD1011M550HV
The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 . Operating at 50ìs, 2% pulse conditions this LDMOS FET device supplies a minimum of 550 watts of power across the instantaneous operating bandwidth of 1030-1090 . All devices are 100% screened for large signal RF parameters.

The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 . Operating at 50ìs, 2% pulse conditions this LDMOS FET device supplies a minimum of 550 watts of power across the instantaneous operating bandwidth of 1030-1090 . All devices are 100% screened for large signal RF parameters.

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILD1011M550HV
Product Name LDMOS L-Band Avionics Transistor
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data