IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 400 watts of peak output power with 11dB gain typically. Specified operation is with Class AB bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening. This device is rated for a peak output power level of PPEAK = 400W @ 10% duty factor. This corresponds to an average power PAVG = 40W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | IGN2729M400 |
| Product Name | GaN S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
