The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base device supplies a minimum of 250 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state amplifiers. This device is rated for a peak output power level of PPEAK = 250W @ 3% duty factor. This corresponds to an average power PAVG =7.5 W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB2856S250 |
| Product Name | ISM Pulse Transistor |
| Transistor Technology / Material | GaN |
