Integra Technologies, Inc. GaN L-Band Avionics Transistor IGN0912L250M

Description
■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.032mm), L=0.400′ (10.16mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture
  • GaN L-Band Avionics Transistor - IGN0912L250M - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.032mm), L=0.400′ (10.16mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture

Suppliers

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GaN L-Band Avionics Transistor - IGN0912L250M - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
GaN L-Band Avionics Transistor
IGN0912L250M
GaN L-Band Avionics Transistor IGN0912L250M
■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.032mm), L=0.400′ (10.16mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture

■ GaN on SiC HEMT Technology
■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V OR
6ms, 20% DC / 50V
■ 0.96-1.22GHz Instantaneous Operating Frequency Range
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.800″ (20.032mm), L=0.400″ (10.16mm)
■ 100% High Power RF Tested in Broadband RF Test Fixture

Supplier's Site

Technical Specifications

  Integra Technologies, Inc.
Product Category RF MOSFET Transistors
Product Number IGN0912L250M
Product Name GaN L-Band Avionics Transistor
Transistor Technology / Material GaN
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