Integra Technologies, Inc. LDMOS L-Band Avionics Transistor ILD1012S500HV

Description
The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150. Operating at 10ìs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500 watts of power across the instantaneous operating bandwidth of 1025-1150. All devices are 100% screened for large signal RF parameters.
Description
The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150. Operating at 10ìs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500 watts of power across the instantaneous operating bandwidth of 1025-1150. All devices are 100% screened for large signal RF parameters.

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LDMOS L-Band Avionics Transistor - ILD1012S500HV - Integra Technologies, Inc.
El Segundo, CA, USA
LDMOS L-Band Avionics Transistor
ILD1012S500HV
LDMOS L-Band Avionics Transistor ILD1012S500HV
The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150. Operating at 10ìs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500 watts of power across the instantaneous operating bandwidth of 1025-1150. All devices are 100% screened for large signal RF parameters.

The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150. Operating at 10ìs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500 watts of power across the instantaneous operating bandwidth of 1025-1150. All devices are 100% screened for large signal RF parameters.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number ILD1012S500HV
Product Name LDMOS L-Band Avionics Transistor
Transistor Technology / Material GaN
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