Integra Technologies, Inc. GaN L-Band Avionics Transistor IGN1011L1200

■ GEN-2 GaN on SiC HEMT Technology ■ POUT-PK = 1200W @ ELM Mode S / 6.4% / 50V OR 2.4ms, 6.4% DC / 50V ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.340′ (34.04mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture