Integra Technologies, Inc. Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 . Operating at a pulse width of 1ms with a duty factor of 20%,... | |
| The high power pulsed transistor part number IDM265L650 is designed for VHF-Band systems operating at 190-265 . Operating at a pulse width of 1ms with a duty factor of 20%,... | |
| The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300... | |
| The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 under CW conditions. Over the instantaneous operating band of 30-512 this dual... | |
| The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 under CW conditions. Over the instantaneous operating band of 30-512 this dual... | |
| The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts... | |
| The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts... |