Integra Technologies, Inc. Datasheets for Power Bipolar Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power Bipolar Transistors: Learn more
| Product Name | Notes |
|---|---|
| ■ GaN on SiC HEMT Technology ■ POUT-PK > 65W @ 300us/20%/32V ■ 2.7-3.0GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 300us/10%/48V ■ 2.4-2.9GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 80W @ 100us/10%/40V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT = 300W CW @ 36V ■ 960-1250 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 1000W @ 5us/1.5%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 10W @ 40ms/50%/32V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 115W @ 3ms/30%/46V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Input and Output Internal Impedance Pre-matched Device ■ Depletion Mode Device... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 120W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 120W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ■ 1.030 and 1.090 GHz Operating Frequency ■ Internal Impedance... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 125W @ 2ms/20%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 125W @ 444 X 7us ON, 6us OFF / 22.7% DC/ 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 12W @ 3ms/30%/46V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 12W @ 5ms/30%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 160W @ 100us/10%/50V ■ 420 to 450 Operating Frequency ■ Internal Input Impedance Pre-matched Device ■ No Internal Output Match for... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 250W @ 444 X 7uS ON, 6us OFF/ 22.7% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 30W @ 32us / 2% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 30W @ 5ms/30%/42V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 380W @ 150us/10%/50V ■ 1.21-1.40 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Input Pre-matched Device ■ Depletion Mode Device ■ | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ 300us / 10% / 50V ■ 1.030 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ 32us / 2% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 40W @ ELM Mode S / 6.4% / 50V ■ 1.025-1.150 GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 45W @ 444 x 7 us ON, 6us OFF, 22.7% / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 600W @ 150us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 60W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 60W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ■ 1.030 and 1.090 GHz Operating Frequency ■ Internal Impedance... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 650W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 70W @ ELM Mode S / 6.4% / 50V ■ 1.030-1.090 GHz Instantaneous Operating Frequency Range ■ Internally Un-matched Device ■ | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 80W @ 300us / 10% / 50V ■ 5.2-5.9GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK > 500W @ 2.0ms / 20% / 50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ 32us/2% / 50V ■ 1.025-1.150GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S / 6.4% / 50V; (PAVG = 64W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S /6.4% / 50V: (PAVG = 64W) ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 10W @ 300us/10%/40V; (PAVG = 1.0W) ■ 2.70-3.20GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 120W @ 100us/20%/30V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 120W @ 40ms/50%/32V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 100us/2%/50V ■ 3.8-4.2GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 130W @ 300us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 135W @ 300us/10%/50V; (PAVG = 13.5W) ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 180W @ 100us/10%/50V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 200W @ 300us/10%/44V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 200W @ 3ms/30%/46V ■ 2.7-3.1GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 250W @ 300us/10%/50V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 100us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 300us/10%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 444 X 7uS ON, 6us OFF/ 22.7% OR 6ms, 20% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 50W @ 1ms/15%/50V ■ 5.2-5.9GHz Instantaneous Operating Frequency Range ■ 50Ω Internally Impedance Matched Device ■ Depletion Mode Device ■ Negative... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 5W @ 300us/10%/50V ■ 2.70-3.10GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 600W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 75W @ 100us/10%/45V; (PAVG = 7.5W) ■ 2.90-3.15GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ 128us/2%/50V ■ 1.090GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and... | |
| ■ GaN on SiC HEMT Technology ■ POUT-PK = 800W @ ELM Mode S / 6.4% / 50V; (PAVG = 51.2W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device... | |
| ■ GEN-2 GaN on SiC HEMT Technology ■ POUT-PK = 1200W @ ELM Mode S / 6.4% / 50V OR 2.4ms, 6.4% DC / 50V ■ 1.030GHz and 1.090GHz Operating... | |
| Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). | |
| IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW... | |
| IGN2729M250C is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency... | |
| IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency... |