The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode this common base device supplies a minimum of 50 watts of peak pulse power under the conditions of 300ƒÝs pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB0810M50 |
| Product Name | BiPolar L-Band Radar Transistor |
| Transistor Technology / Material | GaN |
