Part number ILD2731M30 is designed for S-Band radar applications operating over the 2.7-3.1 GHz instantaneous frequency band. Under 300us/10% pulsing conditions it easily supplies a minimum of 30 watts of peak output power with well over 10dB gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. With appropriate rating, it is operable under nearly any pulse width and duty factor condition. It operates with spectral purity into output VSWR with simultaneous input power overdrive. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening. This device is rated for a peak output power level of PPEAK = 30W @ 10% duty factor. This corresponds to an average power PAVG = 3W.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILD2731M30 |
| Product Name | LDMOS S-Band Radar Transistor |
| Transistor Technology / Material | GaN |
