Integra Technologies, Inc. GaN L-Band Avionics Transistor IGN0912LM500

Description
■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.032mm), L=0.400′ (10.16mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture
  • GaN L-Band Avionics Transistor - IGN0912LM500 - Integra Technologies, Inc.
    Integra Technologies, Inc.
  • RF FETs, MOSFETs - 2251-IGN0912LM500-ND - DigiKey
    DigiKey
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Description
■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.032mm), L=0.400′ (10.16mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture
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Suppliers

Company
Product
Description
Supplier Links
GaN L-Band Avionics Transistor - IGN0912LM500 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
GaN L-Band Avionics Transistor
IGN0912LM500
GaN L-Band Avionics Transistor IGN0912LM500
■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.032mm), L=0.400′ (10.16mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture

■ GaN on SiC HEMT Technology
■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V
■ 0.96-1.22GHz Instantaneous Operating Frequency Range
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.800″ (20.032mm), L=0.400″ (10.16mm)
■ 100% High Power RF Tested in Broadband RF Test Fixture

Supplier's Site
RF FETs, MOSFETs - 2251-IGN0912LM500-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2251-IGN0912LM500-ND
RF FETs, MOSFETs 2251-IGN0912LM500-ND
RF Mosfet

RF Mosfet

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Technical Specifications

  Integra Technologies, Inc. DigiKey
Product Category RF MOSFET Transistors Transistors
Product Number IGN0912LM500 2251-IGN0912LM500-ND
Product Name GaN L-Band Avionics Transistor RF FETs, MOSFETs
Transistor Technology / Material GaN
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