Part number ILD1214EL40 is designed for L-Band radar applications operating over the 1.215-1.400 GHz instantaneous frequency band. Under 5ms/20% pulsing conditions it easily supplies a minimum of 40 watts of peak output power with over 12db gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | ILD1214EL40 |
| Product Name | LDMOS L-Band Radar Transistor |
| Transistor Technology / Material | GaN |
