The high power pulsed radar transistor device part number IB450S300 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 300 watts of peak pulse power under the conditions of 30ìs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters. This device is designed to be used to drive 4 IB450S300 devices.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB450S300 |
| Product Name | BiPolar L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |
