■ GaN on SiC HEMT Technology
■ POUT-PK = 500W @ 12us/3%/50V
■ 2.856GHz Operating Frequency
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=1.070″ (27.18mm), L=0.400″ (10.16mm)
■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IGN2856S500 |
| Product Name | ISM Pulse Transistor |
| Transistor Technology / Material | GaN |
