Integra Technologies, Inc. BiPolar S-Band Radar Transistor IB3135MH5

Description
The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 5 watts of peak pulse power under the conditions of 100us pulse width and 10% duty cycle over the frequency range of 3.1-3.5 GHz. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a board input power range make it ideal for use in reliable high power solid state transmitters. This device is rated for a peak output power level of PPEAK = 5W @ 10% duty factor. This corresponds to an average power PAVG = 0.5W.
  • BiPolar S-Band Radar Transistor - IB3135MH5 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 5 watts of peak pulse power under the conditions of 100us pulse width and 10% duty cycle over the frequency range of 3.1-3.5 GHz. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a board input power range make it ideal for use in reliable high power solid state transmitters. This device is rated for a peak output power level of PPEAK = 5W @ 10% duty factor. This corresponds to an average power PAVG = 0.5W.

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BiPolar S-Band Radar Transistor - IB3135MH5 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
BiPolar S-Band Radar Transistor
IB3135MH5
BiPolar S-Band Radar Transistor IB3135MH5
The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 5 watts of peak pulse power under the conditions of 100us pulse width and 10% duty cycle over the frequency range of 3.1-3.5 GHz. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a board input power range make it ideal for use in reliable high power solid state transmitters. This device is rated for a peak output power level of PPEAK = 5W @ 10% duty factor. This corresponds to an average power PAVG = 0.5W.

The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 5 watts of peak pulse power under the conditions of 100us pulse width and 10% duty cycle over the frequency range of 3.1-3.5 GHz. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a board input power range make it ideal for use in reliable high power solid state transmitters. This device is rated for a peak output power level of PPEAK = 5W @ 10% duty factor. This corresponds to an average power PAVG = 0.5W.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number IB3135MH5
Product Name BiPolar S-Band Radar Transistor
Transistor Technology / Material GaN
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