IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified operation is with Class AB bias. It is also operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | IGN0110UM100 |
| Product Name | GaN Broadband Transistor |
| Transistor Technology / Material | GaN |
