The high power pulsed radar transistor device part number IB1214M130 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.210-1.400 GHz. While operating in class C mode this common base device supplies a minimum of 130 watts of peak pulse power under the conditions of 330ƒÝs pulse width and 10% duty cycle, at Pin=20W. All devices are 100% screened for large signal RF parameters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB1214M130 |
| Product Name | BiPolar L-Band Radar Transistor |
| Transistor Technology / Material | GaN |
