Everspin Technologies, Inc. Datasheets for MRAM
Magnetoresistive random access memory (MRAM) stores bits of data by using magnetic charges. MRAM is designed for high density, high speed, and non-volatile devices and has the potential to replace DRAM and Flash (EEPROM) memory.
MRAM: Learn more
| Product Name | Notes |
|---|---|
| The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. | |
| The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. | |
| The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data... | |
| The MR256D08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers... | |
| The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data... | |
| The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data... |