Everspin Technologies, Inc. 256Kb MRAM (32Kx8) MR256A08BCYS35

Description
The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256A08BCYS35 is the 44-pin TSOP2 package in the industrial temperature (-40 to +85 °C) range option shipped in trays.
Request a Quote Datasheet
Description
The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256A08BCYS35 is the 44-pin TSOP2 package in the industrial temperature (-40 to +85 °C) range option shipped in trays.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
256Kb MRAM (32Kx8) - MR256A08BCYS35 - Everspin Technologies, Inc.
Chandler, AZ, USA
256Kb MRAM (32Kx8)
MR256A08BCYS35
256Kb MRAM (32Kx8) MR256A08BCYS35
The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256A08BCYS35 is the 44-pin TSOP2 package in the industrial temperature (-40 to +85 °C) range option shipped in trays.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BCYS35 is the 44-pin TSOP2 package in the industrial temperature (-40 to +85 °C) range option shipped in trays.

Supplier's Site
Memory - 819-1025-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1352765-MR256A08BCYS35 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1352765-MR256A08BCYS35
Integrated Circuits (ICs) - Memory - Memory 1352765-MR256A08BCYS35
Win Source Part Number: 1352765-MR256A08BCYS 35 Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 39 pct. MSL Level: 3 (168 Hours) Mfr: Everspin Technologies Inc. Package: Tray Product Status: Active Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2 Base Product Number: MR256A08 Technology: MRAM (Magnetoresistive RAM) Mounting Type: Surface Mount HTSUS: 8542.32.0071 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 3V ~ 3.6V Memory Type: Non-Volatile Memory Format: RAM Memory Size: 256Kbit Memory Organization: 32K x 8 Memory Interface: Parallel Write Cycle Time - Word, Page: 35ns Access Time: 35 ns

Win Source Part Number: 1352765-MR256A08BCYS35
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 39 pct.
MSL Level: 3 (168 Hours)
Mfr: Everspin Technologies Inc.
Package: Tray
Product Status: Active
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Base Product Number: MR256A08
Technology: MRAM (Magnetoresistive RAM)
Mounting Type: Surface Mount
HTSUS: 8542.32.0071
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 3V ~ 3.6V
Memory Type: Non-Volatile
Memory Format: RAM
Memory Size: 256Kbit
Memory Organization: 32K x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns

Buy Now Datasheet
IC RAM 256KBIT PARALLEL 44TSOP2

IC RAM 256KBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Memory - MR256A08BCYS35 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 256Kbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 256Kbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR256A08BCYS35 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR256A08BCYS35
Integrated Circuits (ICs) - Memory - Memory MR256A08BCYS35
IC RAM 256KBIT PARALLEL 44TSOP2

IC RAM 256KBIT PARALLEL 44TSOP2

Supplier's Site

Technical Specifications

  Everspin Technologies, Inc. DigiKey Win Source Electronics Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR256A08BCYS35 819-1025-ND 1352765-MR256A08BCYS35 MR256A08BCYS35 MR256A08BCYS35 MR256A08BCYS35
Product Name 256Kb MRAM (32Kx8) Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category MRAM MRAM MRAM; Non-Volatile RAM RAM Non-Volatile
Access Time 35 ns 35 ns 35 ns 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 256 kbits 256 kbits 256 kbits
Number of Words 32 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C04/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details
SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - 00002161771 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details