Everspin Technologies, Inc. 256Kb MRAM (32Kx8) MR256A08BCYS35R

Description
The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256A08BCYS35R is the 44-pin TSOP2 package in industrial temperature (-40 to + 85 °C) range option shipped shipped in tape and reel.
Request a Quote
Description
The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256A08BCYS35R is the 44-pin TSOP2 package in industrial temperature (-40 to + 85 °C) range option shipped shipped in tape and reel.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The MR256A08BCYS35R is a 262,144-bit magnetoresistive random access memory (MRAM) device, organized as 32,768 words of 8 bits. It operates with a 3.3 Volt power supply and features a fast read/write cycle time of 35 ns, making it compatible with SRAM timing. This memory solution offers unlimited read and write endurance, ensuring data retention for over 20 years under specified temperature conditions. The MR256A08BCYS35R is available in a compact 44-lead TSOP2 package and is designed to function reliably across commercial (0 to +70 ¬8C) and industrial (-40 to +85 ¬8C) temperature ranges. It is RoHS compliant and meets MSL-3 moisture sensitivity levels. The device is particularly suitable for applications requiring non-volatile data storage, as it automatically protects data during power loss and eliminates the need for battery-backed SRAM solutions.

Datasheet Summary
Powered by GS/AI

The MR256A08BCYS35R is a 262,144-bit magnetoresistive random access memory (MRAM) device, organized as 32,768 words of 8 bits. It operates with a 3.3 Volt power supply and features a fast read/write cycle time of 35 ns, making it compatible with SRAM timing. This memory solution offers unlimited read and write endurance, ensuring data retention for over 20 years under specified temperature conditions. The MR256A08BCYS35R is available in a compact 44-lead TSOP2 package and is designed to function reliably across commercial (0 to +70 ¬8C) and industrial (-40 to +85 ¬8C) temperature ranges. It is RoHS compliant and meets MSL-3 moisture sensitivity levels. The device is particularly suitable for applications requiring non-volatile data storage, as it automatically protects data during power loss and eliminates the need for battery-backed SRAM solutions.

Suppliers

Company
Product
Description
Supplier Links
256Kb MRAM (32Kx8) - MR256A08BCYS35R - Everspin Technologies, Inc.
Chandler, AZ, USA
256Kb MRAM (32Kx8)
MR256A08BCYS35R
256Kb MRAM (32Kx8) MR256A08BCYS35R
The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR256A08BCYS35R is the 44-pin TSOP2 package in industrial temperature (-40 to + 85 °C) range option shipped shipped in tape and reel.

The MR256A08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as 32,768 words of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solution for applications that must permanently store and retrieve critical
data and programs quickly.
The MR256A08BCYS35R is the 44-pin TSOP2 package in industrial temperature (-40 to + 85 °C) range option shipped shipped in tape and reel.

Supplier's Site
Memory - RAM - MR256A08BCYS35R - 807538-MR256A08BCYS35R - Win Source Electronics
Laguna Hills, CA, United States
Memory - RAM - MR256A08BCYS35R
807538-MR256A08BCYS35R
Memory - RAM - MR256A08BCYS35R 807538-MR256A08BCYS35R
Manufacturer: Everspin Technologies Inc. Win Source Part Number: 807538-MR256A08BCYS3 5R Packaging: Reel Mounting Style: SMD Technology: MRAM (Magnetoresistive RAM) Memory Type: Non-Volatile Memory Size: 256Kb (32K x 8) Access Time: 35ns Supplier Device Package: 44-TSOP2 Temperature Range - Operating: -40°C ~ 85°C Memory Format: RAM Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Manufacturer Package: 44-TSOP Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,500 MSL Level: 3 (168 Hours) Supply Voltage (V): 3V ~ 3.6V

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 807538-MR256A08BCYS35R
Packaging: Reel
Mounting Style: SMD
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 35ns
Supplier Device Package: 44-TSOP2
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: RAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Manufacturer Package: 44-TSOP
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,500
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V

Buy Now
Memory IC and Storage Component - 774-MR256A08BCYS35R - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MR256A08BCYS35R
Memory IC and Storage Component 774-MR256A08BCYS35R
IC RAM 256KBIT PARALLEL 44TSOP2 Product overview: MR256A08BCYS35R from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR256A08BCYS35R can be used for catalog matching and distributor lookup.

IC RAM 256KBIT PARALLEL 44TSOP2 Product overview: MR256A08BCYS35R from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR256A08BCYS35R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - MR256A08BCYS35R-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
IC RAM 256KBIT PARALLEL 44TSOP2

IC RAM 256KBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Memory - MR256A08BCYS35R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 256Kbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 256Kbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet
IC RAM 256KBIT PARALLEL 44TSOP2

IC RAM 256KBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR256A08BCYS35R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR256A08BCYS35R
Integrated Circuits (ICs) - Memory - Memory MR256A08BCYS35R
IC RAM 256KBIT PARALLEL 44TSOP2

IC RAM 256KBIT PARALLEL 44TSOP2

Supplier's Site

Technical Specifications

  Everspin Technologies, Inc. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR256A08BCYS35R 807538-MR256A08BCYS35R 774-MR256A08BCYS35R MR256A08BCYS35R-ND MR256A08BCYS35R MR256A08BCYS35R MR256A08BCYS35R MR256A08BCYS35R
Product Name 256Kb MRAM (32Kx8) Memory - RAM - MR256A08BCYS35R Memory IC and Storage Component Memory Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category MRAM Non-Volatile MRAM RAM RAM MRAM (Magnetoresistive RAM) 44-TSOP (0.400, 10.16mm Width)
Access Time 35 ns 35 ns 35 ns 35 ns 35 ns 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 256 kbits 256 kbits 256 kbits 256 kbits
Number of Words 32 k
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details
Memory - 27S21APC - Lingto Electronic Limited
Rochester Electronics
View Details
3 suppliers
Controllers - BQ2201PNG4 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 8-DIP (0.300\", 7.62mm)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers