Everspin Technologies, Inc. Memory MR0A16AMA35

Description
MRAM (Magnetoresistive RAM) Memory IC 1Mb (64K x 16) Parallel 35ns 48-FBGA (8x8)
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Description
MRAM (Magnetoresistive RAM) Memory IC 1Mb (64K x 16) Parallel 35ns 48-FBGA (8x8)
Request a Quote
Datasheet
Datasheet Summary
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The MR0A16AMA35 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. It operates with a 3.3 Volt power supply and features a fast read/write cycle time of 35 ns, making it compatible with SRAM timing. This memory solution offers unlimited read and write endurance, ensuring data retention for over 20 years under specified temperature conditions. The MR0A16AMA35 is available in both RoHS-compliant 48-ball BGA and 44-pin TSOP2 packages, which are compatible with existing low-power SRAM and non-volatile RAM products. It supports a wide range of operating temperatures, including commercial (0 to +70 °C), industrial (-40 to +85 °C), extended (-40 to +105 °C), and automotive AEC-Q100 Grade 1 (-40 to +125 °C) options. The device includes low-voltage inhibit circuitry for automatic data protection during power loss, enhancing reliability by eliminating the need for battery-backed SRAM solutions.

Datasheet Summary
Powered by GS/AI

The MR0A16AMA35 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. It operates with a 3.3 Volt power supply and features a fast read/write cycle time of 35 ns, making it compatible with SRAM timing. This memory solution offers unlimited read and write endurance, ensuring data retention for over 20 years under specified temperature conditions. The MR0A16AMA35 is available in both RoHS-compliant 48-ball BGA and 44-pin TSOP2 packages, which are compatible with existing low-power SRAM and non-volatile RAM products. It supports a wide range of operating temperatures, including commercial (0 to +70 °C), industrial (-40 to +85 °C), extended (-40 to +105 °C), and automotive AEC-Q100 Grade 1 (-40 to +125 °C) options. The device includes low-voltage inhibit circuitry for automatic data protection during power loss, enhancing reliability by eliminating the need for battery-backed SRAM solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - 819-1019-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (64K x 16) Parallel 35ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mb (64K x 16) Parallel 35ns 48-FBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR0A16AMA35 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0A16AMA35
Integrated Circuits (ICs) - Memory - Memory MR0A16AMA35
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site
Memory - MR0A16AMA35 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 48-FBGA (8x8)

Buy Now Datasheet
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 819-1019-ND MR0A16AMA35 MR0A16AMA35 MR0A16AMA35
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category MRAM Non-Volatile RAM RAM
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type 48-LFBGA BGA; 48-LFBGA
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