The MR0A16AMA35 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. It operates with a 3.3 Volt power supply and features a fast read/write cycle time of 35 ns, making it compatible with SRAM timing. This memory solution offers unlimited read and write endurance, ensuring data retention for over 20 years under specified temperature conditions. The MR0A16AMA35 is available in both RoHS-compliant 48-ball BGA and 44-pin TSOP2 packages, which are compatible with existing low-power SRAM and non-volatile RAM products. It supports a wide range of operating temperatures, including commercial (0 to +70 °C), industrial (-40 to +85 °C), extended (-40 to +105 °C), and automotive AEC-Q100 Grade 1 (-40 to +125 °C) options. The device includes low-voltage inhibit circuitry for automatic data protection during power loss, enhancing reliability by eliminating the need for battery-backed SRAM solutions.
MRAM (Magnetoresistive RAM) Memory IC 1Mb (64K x 16) Parallel 35ns 48-FBGA (8x8)
IC RAM 1MBIT PARALLEL 48FBGA
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 48-FBGA (8x8)
IC RAM 1MBIT PARALLEL 48FBGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 819-1019-ND | MR0A16AMA35 | MR0A16AMA35 | MR0A16AMA35 |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | MRAM | Non-Volatile | RAM | RAM |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits |
| Package Type | 48-LFBGA | BGA; 48-LFBGA |