Everspin Technologies, Inc. 1Mb MRAM (128Kx8) MR0A08BCYS35

Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BCYS35 is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.
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Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BCYS35 is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.
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Suppliers

Company
Product
Description
Supplier Links
1Mb MRAM (128Kx8) - MR0A08BCYS35 - Everspin Technologies, Inc.
Chandler, AZ, USA
1Mb MRAM (128Kx8)
MR0A08BCYS35
1Mb MRAM (128Kx8) MR0A08BCYS35
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BCYS35 is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCYS35 is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.

Supplier's Site
Memory - 819-1000-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 1147987-MR0A08BCYS35 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1147987-MR0A08BCYS35
Integrated Circuits (ICs) - Memory 1147987-MR0A08BCYS35
Win Source Part Number: 1147987-MR0A08BCYS35 Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: MRAM (Magnetoresistive RAM) Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2 Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: RAM Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Everspin Technologies Inc. Other Names: 819-1000 Base Product Number: MR0A08

Win Source Part Number: 1147987-MR0A08BCYS35
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 135
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: RAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Everspin Technologies Inc.
Other Names: 819-1000
Base Product Number: MR0A08

Buy Now Datasheet
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR0A08BCYS35 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0A08BCYS35
Integrated Circuits (ICs) - Memory - Memory MR0A08BCYS35
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Memory - MR0A08BCYS35 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet

Technical Specifications

  Everspin Technologies, Inc. DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR0A08BCYS35 819-1000-ND 1147987-MR0A08BCYS35 MR0A08BCYS35 MR0A08BCYS35 MR0A08BCYS35 MR0A08BCYS35
Product Name 1Mb MRAM (128Kx8) Memory Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category MRAM MRAM MRAM; Non-Volatile MRAM (Magnetoresistive RAM) Non-Volatile RAM RAM
Access Time 35 ns 35 ns 35 ns 35 ns 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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