The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCYS35 is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in trays.
IC RAM 1MBIT PARALLEL 44TSOP2
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2
IC RAM 1MBIT PARALLEL 44TSOP2 Product overview: MR0A08BCYS35 from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR0A08BCYS35 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1147987-MR0A08BCYS35
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 135
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: RAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Everspin Technologies Inc.
Other Names: 819-1000
Base Product Number: MR0A08
IC RAM 1MBIT PARALLEL 44TSOP2
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2
IC RAM 1MBIT PARALLEL 44TSOP2
| Everspin Technologies, Inc. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MR0A08BCYS35 | MR0A08BCYS35 | 819-1000-ND | 774-MR0A08BCYS35 | 1147987-MR0A08BCYS35 | MR0A08BCYS35 | MR0A08BCYS35 | MR0A08BCYS35 |
| Product Name | 1Mb MRAM (128Kx8) | Memory | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | MRAM | MRAM (Magnetoresistive RAM) | MRAM | MRAM; Non-Volatile | Non-Volatile | RAM | RAM | |
| Access Time | 35 ns | 35 ns | 35 ns | 35 ns | 35 ns | 35 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | |
| Number of Words | 128 k |
