Everspin Technologies, Inc. 16Mb MRAM (2Mbx8) MR4A08BCYS35

Description
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08BCYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.
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Description
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08BCYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.
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Suppliers

Company
Product
Description
Supplier Links
16Mb MRAM (2Mbx8) - MR4A08BCYS35 - Everspin Technologies, Inc.
Chandler, AZ, USA
16Mb MRAM (2Mbx8)
MR4A08BCYS35
16Mb MRAM (2Mbx8) MR4A08BCYS35
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08BCYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BCYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.

Supplier's Site
Memory - 819-1050-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 16Mb (2M x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 16Mb (2M x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
IC RAM 16MBIT PARALLEL 44TSOP2

IC RAM 16MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 997663-MR4A08BCYS35 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
997663-MR4A08BCYS35
Integrated Circuits (ICs) - Memory 997663-MR4A08BCYS35
Win Source Part Number: 997663-MR4A08BCYS35 Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: MRAM (Magnetoresistive RAM) Memory Type: Non-Volatile Memory Size: 16Mb (2M x 8) Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2 Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: RAM Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Everspin Technologies Inc. Other Names: MR4A08BCYS35-ND,819- 1050 Base Product Number: MR4A08

Win Source Part Number: 997663-MR4A08BCYS35
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 135
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 16Mb (2M x 8)
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: RAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Everspin Technologies Inc.
Other Names: MR4A08BCYS35-ND,819-1050
Base Product Number: MR4A08

Buy Now Datasheet
IC RAM 16MBIT PARALLEL 44TSOP2

IC RAM 16MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR4A08BCYS35 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR4A08BCYS35
Integrated Circuits (ICs) - Memory - Memory MR4A08BCYS35
IC RAM 16MBIT PARALLEL 44TSOP2

IC RAM 16MBIT PARALLEL 44TSOP2

Supplier's Site
Memory - MR4A08BCYS35 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet

Technical Specifications

  Everspin Technologies, Inc. DigiKey ODG (Origin Data Global) Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR4A08BCYS35 819-1050-ND MR4A08BCYS35 997663-MR4A08BCYS35 MR4A08BCYS35 MR4A08BCYS35 MR4A08BCYS35
Product Name 16Mb MRAM (2Mbx8) Memory Memory Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category MRAM MRAM MRAM (Magnetoresistive RAM) MRAM; Non-Volatile RAM Non-Volatile RAM
Access Time 35 ns 35 ns 35 ns 35 ns 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits 16000 kbits 16000 kbits
Number of Words 2000 k
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