Everspin Technologies, Inc. 16Mb MRAM (2Mbx8) MR4A08BMYS35

Description
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08BMYS35 is the 44-pin TSOP2 package option operating over the AEC-Q100 temperature range (-40 to +125°C) and shipped in trays.
Description
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08BMYS35 is the 44-pin TSOP2 package option operating over the AEC-Q100 temperature range (-40 to +125°C) and shipped in trays.

Suppliers

Company
Product
Description
Supplier Links
16Mb MRAM (2Mbx8) - MR4A08BMYS35 - Everspin Technologies, Inc.
Chandler, AZ, USA
16Mb MRAM (2Mbx8)
MR4A08BMYS35
16Mb MRAM (2Mbx8) MR4A08BMYS35
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08BMYS35 is the 44-pin TSOP2 package option operating over the AEC-Q100 temperature range (-40 to +125°C) and shipped in trays.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR4A08BMYS35 is the 44-pin TSOP2 package option operating over the AEC-Q100 temperature range (-40 to +125°C) and shipped in trays.

Supplier's Site

Technical Specifications

  Everspin Technologies, Inc.
Product Category Memory Chips
Product Number MR4A08BMYS35
Product Name 16Mb MRAM (2Mbx8)
Memory Category MRAM
Access Time 35 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 16000 kbits
Number of Words 2000 k
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - DP8422AV-20 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882679 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details