Everspin Technologies, Inc. 1Mb MRAM (128Kx8) MR0A08BMA35R

Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BMA35R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.
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Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BMA35R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.
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Suppliers

Company
Product
Description
Supplier Links
1Mb MRAM (128Kx8) - MR0A08BMA35R - Everspin Technologies, Inc.
Chandler, AZ, USA
1Mb MRAM (128Kx8)
MR0A08BMA35R
1Mb MRAM (128Kx8) MR0A08BMA35R
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BMA35R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BMA35R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.

Supplier's Site
Memory - MR0A08BMA35R-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 48-FBGA (8x8)

Buy Now Datasheet
Memory - RAM - MR0A08BMA35R - 885896-MR0A08BMA35R - Win Source Electronics
Laguna Hills, CA, United States
Memory - RAM - MR0A08BMA35R
885896-MR0A08BMA35R
Memory - RAM - MR0A08BMA35R 885896-MR0A08BMA35R
Manufacturer: Everspin Technologies Inc. Win Source Part Number: 885896-MR0A08BMA35R Operating Temperature Range: 0°C ~ 70°C (TA) Features: MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35 ns 48-FBGA (8x8) Package: 48-LFBGA Package: Reel - TR Mounting: Surface Mount Family Name: MR0A08 Categories: Integrated Circuits (ICs) Case / Package: 48-FBGA (8x8) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 2000 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 37 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0071

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 885896-MR0A08BMA35R
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35 ns 48-FBGA (8x8)
Package: 48-LFBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: MR0A08
Categories: Integrated Circuits (ICs)
Case / Package: 48-FBGA (8x8)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071

Buy Now Datasheet
Memory IC and Storage Component - 774-MR0A08BMA35R - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MR0A08BMA35R
Memory IC and Storage Component 774-MR0A08BMA35R
IC RAM 1MBIT PARALLEL 48FBGA Product overview: MR0A08BMA35R from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR0A08BMA35R can be used for catalog matching and distributor lookup.

IC RAM 1MBIT PARALLEL 48FBGA Product overview: MR0A08BMA35R from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR0A08BMA35R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - MR0A08BMA35R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 48-FBGA (8x8)

Buy Now Datasheet
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR0A08BMA35R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0A08BMA35R
Integrated Circuits (ICs) - Memory - Memory MR0A08BMA35R
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site

Technical Specifications

  Everspin Technologies, Inc. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR0A08BMA35R MR0A08BMA35R-ND 885896-MR0A08BMA35R 774-MR0A08BMA35R MR0A08BMA35R MR0A08BMA35R MR0A08BMA35R
Product Name 1Mb MRAM (128Kx8) Memory Memory - RAM - MR0A08BMA35R Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category MRAM MRAM MRAM; Non-Volatile RAM RAM Non-Volatile
Access Time 35 ns 35 ns 35 ns 35 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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