Everspin Technologies, Inc. Memory MR0A16AYS35

Description
IC RAM 1MBIT PARALLEL 44TSOP2
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Description
IC RAM 1MBIT PARALLEL 44TSOP2
Request a Quote Datasheet

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IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1022248-MR0A16AYS35 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1022248-MR0A16AYS35
Integrated Circuits (ICs) - Memory 1022248-MR0A16AYS35
Win Source Part Number: 1022248-MR0A16AYS35 Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: MRAM (Magnetoresistive RAM) Memory Type: Non-Volatile Memory Size: 1Mb (64K x 16) Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2 Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: RAM Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Everspin Technologies Inc. Other Names: 819-1007,MR0A16AYS35 -ND Base Product Number: MR0A16

Win Source Part Number: 1022248-MR0A16AYS35
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 135
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 1Mb (64K x 16)
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: RAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Everspin Technologies Inc.
Other Names: 819-1007,MR0A16AYS35-ND
Base Product Number: MR0A16

Buy Now Datasheet
Memory - 819-1007-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (64K x 16) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mb (64K x 16) Parallel 35ns 44-TSOP2

Buy Now Datasheet
Memory - MR0A16AYS35 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR0A16AYS35 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0A16AYS35
Integrated Circuits (ICs) - Memory - Memory MR0A16AYS35
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR0A16AYS35 1022248-MR0A16AYS35 819-1007-ND MR0A16AYS35 MR0A16AYS35 MR0A16AYS35
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category MRAM (Magnetoresistive RAM) MRAM; Non-Volatile MRAM RAM Non-Volatile RAM
Access Time 35 ns 35 ns 35 ns 35 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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