Everspin Technologies, Inc. 1Mb MRAM (128Kx8) MR0A08BYS35R

Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BYS35R is the 44-pin TSOP2 package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.
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Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BYS35R is the 44-pin TSOP2 package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.
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Suppliers

Company
Product
Description
Supplier Links
1Mb MRAM (128Kx8) - MR0A08BYS35R - Everspin Technologies, Inc.
Chandler, AZ, USA
1Mb MRAM (128Kx8)
MR0A08BYS35R
1Mb MRAM (128Kx8) MR0A08BYS35R
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BYS35R is the 44-pin TSOP2 package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BYS35R is the 44-pin TSOP2 package option in the commercial temperature operating range (0 to +70°C) shipped in tape and reel.

Supplier's Site
Memory - MR0A08BYS35R-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
Memory - RAM - MR0A08BYS35R - 807831-MR0A08BYS35R - Win Source Electronics
Laguna Hills, CA, United States
Memory - RAM - MR0A08BYS35R
807831-MR0A08BYS35R
Memory - RAM - MR0A08BYS35R 807831-MR0A08BYS35R
Manufacturer: Everspin Technologies Inc. Win Source Part Number: 807831-MR0A08BYS35R Packaging: Reel Mounting Style: SMD Technology: MRAM (Magnetoresistive RAM) Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 35ns Supplier Device Package: 44-TSOP2 Temperature Range - Operating: 0°C ~ 70°C Memory Format: RAM Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Manufacturer Package: 44-TSOP Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,500 MSL Level: 3 (168 Hours) Supply Voltage (V): 3V ~ 3.6V

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 807831-MR0A08BYS35R
Packaging: Reel
Mounting Style: SMD
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 35ns
Supplier Device Package: 44-TSOP2
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: RAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Manufacturer Package: 44-TSOP
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,500
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V

Buy Now
Memory - MR0A08BYS35R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR0A08BYS35R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0A08BYS35R
Integrated Circuits (ICs) - Memory - Memory MR0A08BYS35R
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site

Technical Specifications

  Everspin Technologies, Inc. DigiKey Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR0A08BYS35R MR0A08BYS35R-ND 807831-MR0A08BYS35R MR0A08BYS35R MR0A08BYS35R MR0A08BYS35R
Product Name 1Mb MRAM (128Kx8) Memory Memory - RAM - MR0A08BYS35R Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category MRAM MRAM Non-Volatile RAM RAM Non-Volatile
Access Time 35 ns 35 ns 35 ns 35 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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