The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The
MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR2A08AMYS35 is the 44-pin TSOP2 packaged option operating over the AEC-Q100 Grade 1 temperature range (-40 to +125°C) and shipped in trays.
MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x 8) Parallel 35ns 44-TSOP2
IC RAM 4MBIT PARALLEL 44TSOP2
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 44-TSOP2
IC RAM 4MBIT PARALLEL 44TSOP2
| Everspin Technologies, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MR2A08AMYS35 | 819-1026-ND | MR2A08AMYS35 | MR2A08AMYS35 | MR2A08AMYS35 |
| Product Name | 4Mb MRAM (512Kx8) | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | MRAM | MRAM | Non-Volatile | RAM | RAM |
| Access Time | 35 ns | 35 ns | 35 ns | ||
| Operating Temperature | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | ||
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits |
| Number of Words | 512 k |
