Everspin Technologies, Inc. 1Mb MRAM (128Kx8) MR0A08BCYS35R

Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BCYS35R is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.
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Description
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BCYS35R is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.
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Suppliers

Company
Product
Description
Supplier Links
1Mb MRAM (128Kx8) - MR0A08BCYS35R - Everspin Technologies, Inc.
Chandler, AZ, USA
1Mb MRAM (128Kx8)
MR0A08BCYS35R
1Mb MRAM (128Kx8) MR0A08BCYS35R
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BCYS35R is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCYS35R is the 44-pin TSOP2 package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.

Supplier's Site
Memory IC and Storage Component - 774-MR0A08BCYS35R - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MR0A08BCYS35R
Memory IC and Storage Component 774-MR0A08BCYS35R
IC RAM 1MBIT PARALLEL 44TSOP2 Product overview: MR0A08BCYS35R from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR0A08BCYS35R can be used for catalog matching and distributor lookup.

IC RAM 1MBIT PARALLEL 44TSOP2 Product overview: MR0A08BCYS35R from Everspin Technologies, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MR0A08BCYS35R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1016899-MR0A08BCYS35R - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1016899-MR0A08BCYS35R
Integrated Circuits (ICs) - Memory 1016899-MR0A08BCYS35R
Win Source Part Number: 1016899-MR0A08BCYS35 R Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel (TR) Standard Package: 1,500 Mounting: SMD (SMT) Technology: MRAM (Magnetoresistive RAM) Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2 Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: RAM Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Everspin Technologies Inc. Base Product Number: MR0A08

Win Source Part Number: 1016899-MR0A08BCYS35R
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel (TR)
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: RAM
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Everspin Technologies Inc.
Base Product Number: MR0A08

Buy Now Datasheet
Memory - MR0A08BCYS35R-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
Memory - MR0A08BCYS35R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR0A08BCYS35R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0A08BCYS35R
Integrated Circuits (ICs) - Memory - Memory MR0A08BCYS35R
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site
IC RAM 1MBIT PARALLEL 44TSOP2

IC RAM 1MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet

Technical Specifications

  Everspin Technologies, Inc. ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR0A08BCYS35R 774-MR0A08BCYS35R MR0A08BCYS35R 1016899-MR0A08BCYS35R MR0A08BCYS35R-ND MR0A08BCYS35R MR0A08BCYS35R MR0A08BCYS35R
Product Name 1Mb MRAM (128Kx8) Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category MRAM MRAM (Magnetoresistive RAM) MRAM; Non-Volatile MRAM RAM Non-Volatile RAM
Access Time 35 ns 35 ns 35 ns 35 ns 35 ns 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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