Everspin Technologies, Inc. 1Mb MRAM (128Kx8) MR0A08BCMA35R

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1Mb MRAM (128Kx8) - MR0A08BCMA35R - Everspin Technologies, Inc.
Chandler, AZ, USA
1Mb MRAM (128Kx8)
MR0A08BCMA35R
1Mb MRAM (128Kx8) MR0A08BCMA35R
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0A08BCMA35R is the 48-pin BGA package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0A08BCMA35R is the 48-pin BGA package option in the industrial temperature operating range (-40 to +85°C) shipped in tape and reel.

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MR0A08BCMA35R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0A08BCMA35R
Integrated Circuits (ICs) - Memory - Memory MR0A08BCMA35R
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site
Memory - MR0A08BCMA35R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 35 ns 48-FBGA (8x8)

Supplier's Site Datasheet
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site Datasheet
Memory - MR0A08BCMA35R-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 48-FBGA (8x8)

Supplier's Site Datasheet

Technical Specifications

  Everspin Technologies, Inc. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited DigiKey
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR0A08BCMA35R MR0A08BCMA35R MR0A08BCMA35R MR0A08BCMA35R MR0A08BCMA35R-ND
Product Name 1Mb MRAM (128Kx8) Integrated Circuits (ICs) - Memory - Memory Memory Memory Memory
Memory Category MRAM Non-Volatile RAM RAM MRAM
Access Time 35 ns 35 ns 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

64KBit, SPI BUS, Low Power Serial EEPROM - BR25S640FVM-W - ROHM Semiconductor GmbH
Specs
Memory Category EEPROM
Data Retention 40 years
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
 - 2006583 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category NVRAM
Access Time 70 ns
Density 256 kbits
View Details
Synchronous SRAM with ECC - CY7C1460KVE25-167AXC - Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Density 36864 to 36000 kbits
View Details
4 suppliers
 - 27S181PC-G - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
5 suppliers