Everspin Technologies, Inc. 1Mb MRAM (128Kx8) MR0D08BMA45R

Description
The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0D08BMA45R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) and shipped in tape and reel.
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Description
The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0D08BMA45R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) and shipped in tape and reel.
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Datasheet
Datasheet Summary
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The MR0D08BMA45R is a dual power supply magnetoresistive random access memory (MRAM) device with a capacity of 1,048,576 bits, organized as 131,072 words of 8 bits. It operates with a power supply of +3.3 volts and supports I/O voltage ranges from +1.65 to +3.6 volts. The device features a fast read/write cycle time of 45 ns, making it compatible with SRAM timing, and offers unlimited read and write endurance. Data stored in the MR0D08BMA45R is non-volatile for over 20 years, ensuring reliable data retention even in the event of power loss, thanks to its low-voltage inhibit circuitry. The memory is packaged in a compact 48-pin ball grid array (BGA) format, measuring 8 mm x 8 mm, and is compliant with RoHS standards. It is suitable for applications requiring permanent storage of critical data and programs, particularly in environments with commercial temperature ranges from 0 to +70 ¬8C.

Datasheet Summary
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The MR0D08BMA45R is a dual power supply magnetoresistive random access memory (MRAM) device with a capacity of 1,048,576 bits, organized as 131,072 words of 8 bits. It operates with a power supply of +3.3 volts and supports I/O voltage ranges from +1.65 to +3.6 volts. The device features a fast read/write cycle time of 45 ns, making it compatible with SRAM timing, and offers unlimited read and write endurance. Data stored in the MR0D08BMA45R is non-volatile for over 20 years, ensuring reliable data retention even in the event of power loss, thanks to its low-voltage inhibit circuitry. The memory is packaged in a compact 48-pin ball grid array (BGA) format, measuring 8 mm x 8 mm, and is compliant with RoHS standards. It is suitable for applications requiring permanent storage of critical data and programs, particularly in environments with commercial temperature ranges from 0 to +70 ¬8C.

Suppliers

Company
Product
Description
Supplier Links
1Mb MRAM (128Kx8) - MR0D08BMA45R - Everspin Technologies, Inc.
Chandler, AZ, USA
1Mb MRAM (128Kx8)
MR0D08BMA45R
1Mb MRAM (128Kx8) MR0D08BMA45R
The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR0D08BMA45R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) and shipped in tape and reel.

The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0D08BMA45R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) and shipped in tape and reel.

Supplier's Site
Memory - 819-MR0D08BMA45RTR-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 45ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 45ns 48-FBGA (8x8)

Buy Now Datasheet
Memory - 819-MR0D08BMA45RCT-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 45ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 45ns 48-FBGA (8x8)

Buy Now Datasheet
Memory - RAM - MR0D08BMA45R - 123564-MR0D08BMA45R - Win Source Electronics
Laguna Hills, CA, United States
Memory - RAM - MR0D08BMA45R
123564-MR0D08BMA45R
Memory - RAM - MR0D08BMA45R 123564-MR0D08BMA45R
Manufacturer: Everspin Technologies Inc. Win Source Part Number: 123564-MR0D08BMA45R Packaging: Reel - TR Mounting: SMD (SMT) Technology: MRAM (Magnetoresistive RAM) Memory Size: 1Mb (128K x 8) Access Time: 45ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-FBGA (8x8) Supply Voltage - Operating: 3 V to 3.6 V Memory Format: RAM Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 123564-MR0D08BMA45R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Access Time: 45ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-FBGA (8x8)
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: RAM
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR0D08BMA45R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR0D08BMA45R
Integrated Circuits (ICs) - Memory - Memory MR0D08BMA45R
IC RAM 1MBIT PARALLEL 48FBGA

IC RAM 1MBIT PARALLEL 48FBGA

Supplier's Site
Memory - MR0D08BMA45R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 45 ns 48-FBGA (8x8)

MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 45 ns 48-FBGA (8x8)

Buy Now Datasheet

Technical Specifications

  Everspin Technologies, Inc. DigiKey Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR0D08BMA45R 819-MR0D08BMA45RTR-ND 123564-MR0D08BMA45R MR0D08BMA45R MR0D08BMA45R MR0D08BMA45R
Product Name 1Mb MRAM (128Kx8) Memory Memory - RAM - MR0D08BMA45R Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category MRAM MRAM MRAM; RAM RAM Non-Volatile RAM
Access Time 45 ns 45 ns 45 ns 45 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Number of Words 128 k
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