The MR0D08BMA45R is a dual power supply magnetoresistive random access memory (MRAM) device with a capacity of 1,048,576 bits, organized as 131,072 words of 8 bits. It operates with a power supply of +3.3 volts and supports I/O voltage ranges from +1.65 to +3.6 volts. The device features a fast read/write cycle time of 45 ns, making it compatible with SRAM timing, and offers unlimited read and write endurance. Data stored in the MR0D08BMA45R is non-volatile for over 20 years, ensuring reliable data retention even in the event of power loss, thanks to its low-voltage inhibit circuitry. The memory is packaged in a compact 48-pin ball grid array (BGA) format, measuring 8 mm x 8 mm, and is compliant with RoHS standards. It is suitable for applications requiring permanent storage of critical data and programs, particularly in environments with commercial temperature ranges from 0 to +70 ¬8C.
The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR0D08BMA45R is the 48-pin BGA package option in the commercial temperature operating range (0 to +70°C) and shipped in tape and reel.
Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 123564-MR0D08BMA45R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Access Time: 45ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-FBGA (8x8)
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: RAM
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 45ns 48-FBGA (8x8)
MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 45ns 48-FBGA (8x8)
MRAM (Magnetoresistive RAM) Memory IC 1Mbit Parallel 45 ns 48-FBGA (8x8)
IC RAM 1MBIT PARALLEL 48FBGA
IC RAM 1MBIT PARALLEL 48FBGA
| Everspin Technologies, Inc. | Win Source Electronics | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MR0D08BMA45R | 123564-MR0D08BMA45R | 819-MR0D08BMA45RTR-ND | MR0D08BMA45R | MR0D08BMA45R | MR0D08BMA45R |
| Product Name | 1Mb MRAM (128Kx8) | Memory - RAM - MR0D08BMA45R | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | MRAM | MRAM; RAM | MRAM | RAM | Non-Volatile | RAM |
| Access Time | 45 ns | 45 ns | 45 ns | 45 ns | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | |
| Number of Words | 128 k |
