Everspin Technologies, Inc. 4Mb MRAM (512Kx8) MR2A08ACYS35

Description
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A08ACYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.
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Description
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A08ACYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.
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Suppliers

Company
Product
Description
Supplier Links
4Mb MRAM (512Kx8) - MR2A08ACYS35 - Everspin Technologies, Inc.
Chandler, AZ, USA
4Mb MRAM (512Kx8)
MR2A08ACYS35
4Mb MRAM (512Kx8) MR2A08ACYS35
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A08ACYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.

The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The
MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR2A08ACYS35 is the 44-pin TSOP2 package option operating over the industrial temperature range (-40 to +85°C) and shipped in trays.

Supplier's Site
Memory - RAM - MR2A08ACYS35 - 119190-MR2A08ACYS35 - Win Source Electronics
Laguna Hills, CA, United States
Memory - RAM - MR2A08ACYS35
119190-MR2A08ACYS35
Memory - RAM - MR2A08ACYS35 119190-MR2A08ACYS35
Manufacturer: Everspin Technologies Inc. Win Source Part Number: 119190-MR2A08ACYS35 Packaging: Tray Mounting: SMD (SMT) Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mb (512K x 8) Access Time: 35ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 44-TSOP2 (10.2x18.4) Supply Voltage - Operating: 3 V to 3.6 V Memory Format: RAM Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 135

Manufacturer: Everspin Technologies Inc.
Win Source Part Number: 119190-MR2A08ACYS35
Packaging: Tray
Mounting: SMD (SMT)
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (512K x 8)
Access Time: 35ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 44-TSOP2 (10.2x18.4)
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: RAM
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 135

Buy Now Datasheet
Memory - 819-1003-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
IC RAM 4MBIT PARALLEL 44TSOP2

IC RAM 4MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Memory - MR2A08ACYS35 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet
IC RAM 4MBIT PARALLEL 44TSOP2

IC RAM 4MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR2A08ACYS35 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR2A08ACYS35
Integrated Circuits (ICs) - Memory - Memory MR2A08ACYS35
IC RAM 4MBIT PARALLEL 44TSOP2

IC RAM 4MBIT PARALLEL 44TSOP2

Supplier's Site

Technical Specifications

  Everspin Technologies, Inc. Win Source Electronics DigiKey ODG (Origin Data Global) Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR2A08ACYS35 119190-MR2A08ACYS35 819-1003-ND MR2A08ACYS35 MR2A08ACYS35 MR2A08ACYS35 MR2A08ACYS35
Product Name 4Mb MRAM (512Kx8) Memory - RAM - MR2A08ACYS35 Memory Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category MRAM MRAM; RAM MRAM MRAM (Magnetoresistive RAM) RAM RAM Non-Volatile
Access Time 35 ns 35 ns 35 ns 35 ns 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Number of Words 512 k
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