Everspin Technologies, Inc. 4Mb MRAM (512Kx8) MR2A08AMYS35R

Description
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A08AMYS35R is the 44-pin TSOP2 packaged option operating over the AEC-Q100 Grade 1 temperature range (-40 to +125°C) and shipped in tape and reel.
Request a Quote Datasheet
Description
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A08AMYS35R is the 44-pin TSOP2 packaged option operating over the AEC-Q100 Grade 1 temperature range (-40 to +125°C) and shipped in tape and reel.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
4Mb MRAM (512Kx8) - MR2A08AMYS35R - Everspin Technologies, Inc.
Chandler, AZ, USA
4Mb MRAM (512Kx8)
MR2A08AMYS35R
4Mb MRAM (512Kx8) MR2A08AMYS35R
The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR2A08AMYS35R is the 44-pin TSOP2 packaged option operating over the AEC-Q100 Grade 1 temperature range (-40 to +125°C) and shipped in tape and reel.

The MR2A08A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The
MR2A08A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR2A08AMYS35R is the 44-pin TSOP2 packaged option operating over the AEC-Q100 Grade 1 temperature range (-40 to +125°C) and shipped in tape and reel.

Supplier's Site
Memory - MR2A08AMYS35R-ND - DigiKey
Thief River Falls, MN, United States
MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x 8) Parallel 35ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x 8) Parallel 35ns 44-TSOP2

Buy Now Datasheet
IC RAM 4MBIT PARALLEL 44TSOP2

IC RAM 4MBIT PARALLEL 44TSOP2

Supplier's Site Datasheet
Memory - MR2A08AMYS35R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 44-TSOP2

MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 44-TSOP2

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MR2A08AMYS35R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MR2A08AMYS35R
Integrated Circuits (ICs) - Memory - Memory MR2A08AMYS35R
IC RAM 4MBIT PARALLEL 44TSOP2

IC RAM 4MBIT PARALLEL 44TSOP2

Supplier's Site

Technical Specifications

  Everspin Technologies, Inc. DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MR2A08AMYS35R MR2A08AMYS35R-ND MR2A08AMYS35R MR2A08AMYS35R MR2A08AMYS35R
Product Name 4Mb MRAM (512Kx8) Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category MRAM MRAM RAM RAM Non-Volatile
Access Time 35 ns 35 ns 35 ns
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-9459901MYA - ODG (Origin Data Global)
Infineon Technologies AG
Specs
Memory Category NVSRAM (Non-Volatile SRAM); SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1712222 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 128000 kbits
Package Type SOIC; SOIC
View Details