MOSFET N-CH 800V 6A TO252-3 Product overview: SPD06N80C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD06N80C3ATMA1 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3
N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 800V 6A TO252-3
Manufacturer: Infineon Technologies
Win Source Part Number: 124738-SPD06N80C3ATM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 785pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 900 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 6A TO252-3
Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R
MOSFET, N CHANNEL, 800V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SPD06N80C3ATMA1 | SPD06N80C3ATMA1 | SPD06N80C3ATMA1DKR-ND | SPD06N80C3ATMA1 | 124738-SPD06N80C3ATMA1 | 2144480 | 2144481P | SPD06N80C3ATMA1 | SPD06N80C3ATMA1 | 376-SPD06N80C3ATMA1 | 33P8208 |
| Product Name | 800V 6A TO252 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD06N80C3ATMA1 | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R | Mosfet, N Channel, 800V, 6A, To-252; Channel Type Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | ||||||||
| PD | 83 milliwatts | 83000 milliwatts | 83000 milliwatts | 83000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
