Infineon Technologies AG 800V 6A TO252 MOSFET Transistor SPD06N80C3ATMA1

Description
MOSFET N-CH 800V 6A TO252-3 Product overview: SPD06N80C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD06N80C3ATMA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 800V 6A TO252-3 Product overview: SPD06N80C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD06N80C3ATMA1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
800V 6A TO252 MOSFET Transistor
278-SPD06N80C3ATMA1
800V 6A TO252 MOSFET Transistor 278-SPD06N80C3ATMA1
MOSFET N-CH 800V 6A TO252-3 Product overview: SPD06N80C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD06N80C3ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 800V 6A TO252-3 Product overview: SPD06N80C3ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD06N80C3ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - SPD06N80C3ATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Supplier's Site Datasheet
Single FETs, MOSFETs - SPD06N80C3ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD06N80C3ATMA1DKR-ND
Single FETs, MOSFETs SPD06N80C3ATMA1DKR-ND
N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - SPD06N80C3ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD06N80C3ATMA1TR-ND
Single FETs, MOSFETs SPD06N80C3ATMA1TR-ND
N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3

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Single FETs, MOSFETs - SPD06N80C3ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD06N80C3ATMA1CT-ND
Single FETs, MOSFETs SPD06N80C3ATMA1CT-ND
N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3

N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3

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Single FETs, MOSFETs - SPD06N80C3ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SPD06N80C3ATMA1
Single FETs, MOSFETs SPD06N80C3ATMA1
MOSFET N-CH 800V 6A TO252-3

MOSFET N-CH 800V 6A TO252-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD06N80C3ATMA1 - 124738-SPD06N80C3ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD06N80C3ATMA1
124738-SPD06N80C3ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD06N80C3ATMA1 124738-SPD06N80C3ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 124738-SPD06N80C3ATM A1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 3.9V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 785pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 900 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 124738-SPD06N80C3ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 785pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 900 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 2144480 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144480
MOSFETs 2144480
Infineon MOSFET SPD06N80C3ATMA1

Infineon MOSFET SPD06N80C3ATMA1

Supplier's Site
MOSFETs - 2144481P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144481P
MOSFETs 2144481P
Infineon MOSFET SPD06N80C3ATMA1

Infineon MOSFET SPD06N80C3ATMA1

Supplier's Site
MOSFETs - 2144481 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2144481
MOSFETs 2144481
Infineon MOSFET SPD06N80C3ATMA1

Infineon MOSFET SPD06N80C3ATMA1

Supplier's Site
Sheung Wan, Hong Kong
MOSFET LOW POWER_LEGACY

MOSFET LOW POWER_LEGACY

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD06N80C3ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD06N80C3ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD06N80C3ATMA1
MOSFET N-CH 800V 6A TO252-3

MOSFET N-CH 800V 6A TO252-3

Supplier's Site
Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R - 376-SPD06N80C3ATMA1 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R
376-SPD06N80C3ATMA1
Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R 376-SPD06N80C3ATMA1
Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R

Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R

Supplier's Site
Mosfet, N Channel, 800V, 6A, To-252; Channel Type Infineon - 33P8208 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 800V, 6A, To-252; Channel Type Infineon
33P8208
Mosfet, N Channel, 800V, 6A, To-252; Channel Type Infineon 33P8208
MOSFET, N CHANNEL, 800V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 800V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SPD06N80C3ATMA1 SPD06N80C3ATMA1 SPD06N80C3ATMA1DKR-ND SPD06N80C3ATMA1 124738-SPD06N80C3ATMA1 2144480 2144481P SPD06N80C3ATMA1 SPD06N80C3ATMA1 376-SPD06N80C3ATMA1 33P8208
Product Name 800V 6A TO252 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD06N80C3ATMA1 MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 800(Min)V 6A 3-Pin TO-252 T/R Mosfet, N Channel, 800V, 6A, To-252; Channel Type Infineon
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 800 volts 800 volts 800 volts
PD 83 milliwatts 83000 milliwatts 83000 milliwatts 83000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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