Win Source Part Number: 1095542-SPA07N60C3XK
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-31
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SPA08N50C3; SPA06N60C3; SPP06N60C3; STF11NM50N; STF11N65M2; STP11N65M2SP00021630
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPA07N60C3IN-ND,SPA0
Base Product Number: SPA07N60
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 7.3A TO220-FP Product overview: SPA07N60C3XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPA07N60C3XKSA1 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 7.3A TO220-FP
N-Channel 650V 7.3A (Tc) 32W (Tc) Through Hole PG-TO220-3-31
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CHANNEL, 650V, 7.3A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 650V 7.3A TO220-FP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1095542-SPA07N60C3XKSA1 | 278-SPA07N60C3XKSA1 | SPA07N60C3XKSA1 | SPA07N60C3XKSA1-ND | SPA07N60C3XKSA1 | 62M0114 | SPA07N60C3XKSA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650V 7.3A TO220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Channel, 650V, 7.3A, To-220Fp-3; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 32000 milliwatts | 32000 milliwatts | 32000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | Tube | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | PG-TO22-3 | TO-3; TO-220 | TO-220; TO-220-3 Full Pack |
| MOSFET Operating Mode | Enhancement |