N-Channel 650V 7.3A (Tc) 32W (Tc) Through Hole PG-TO220-3-31
MOSFET N-CH 650V 7.3A TO220-FP
MOSFET N-CH 650V 7.3A TO220-FP Product overview: SPA07N60C3XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPA07N60C3XKSA1 can be used for catalog matching and distributor lookup.
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Win Source Part Number: 1095542-SPA07N60C3XK
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-31
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SPA08N50C3; SPA06N60C3; SPP06N60C3; STF11NM50N; STF11N65M2; STP11N65M2SP00021630
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPA07N60C3IN-ND,SPA0
Base Product Number: SPA07N60
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 7.3A TO220-FP
MOSFET, N CHANNEL, 650V, 7.3A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SPA07N60C3XKSA1-ND | SPA07N60C3XKSA1 | 278-SPA07N60C3XKSA1 | SPA07N60C3XKSA1 | 1095542-SPA07N60C3XKSA1 | SPA07N60C3XKSA1 | 62M0114 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 650V 7.3A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 650V, 7.3A, To-220Fp-3; Channel Type Infineon | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | Tube | PG-TO22-3 | SOT3 | TO-220; TO-220-3 Full Pack | TO-3; TO-220 |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | 600 volts | |||||
| IDSS | 7300 milliamps | 7300 milliamps |