Infineon Technologies AG Single FETs, MOSFETs SPA07N60C3XKSA1

Description
N-Channel 650V 7.3A (Tc) 32W (Tc) Through Hole PG-TO220-3-31
Request a Quote Datasheet
Description
N-Channel 650V 7.3A (Tc) 32W (Tc) Through Hole PG-TO220-3-31
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SPA07N60C3XKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPA07N60C3XKSA1-ND
Single FETs, MOSFETs SPA07N60C3XKSA1-ND
N-Channel 650V 7.3A (Tc) 32W (Tc) Through Hole PG-TO220-3-31

N-Channel 650V 7.3A (Tc) 32W (Tc) Through Hole PG-TO220-3-31

Buy Now Datasheet
Single FETs, MOSFETs - SPA07N60C3XKSA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SPA07N60C3XKSA1
Single FETs, MOSFETs SPA07N60C3XKSA1
MOSFET N-CH 650V 7.3A TO220-FP

MOSFET N-CH 650V 7.3A TO220-FP

Supplier's Site Datasheet
Singapore
650V 7.3A TO220 MOSFET Transistor
278-SPA07N60C3XKSA1
650V 7.3A TO220 MOSFET Transistor 278-SPA07N60C3XKSA1
MOSFET N-CH 650V 7.3A TO220-FP Product overview: SPA07N60C3XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPA07N60C3XKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 7.3A TO220-FP Product overview: SPA07N60C3XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPA07N60C3XKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - SPA07N60C3XKSA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1095542-SPA07N60C3XKSA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1095542-SPA07N60C3XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1095542-SPA07N60C3XKSA1
Win Source Part Number: 1095542-SPA07N60C3XK SA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 32W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3-31 Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SPA08N50C3; SPA06N60C3; SPP06N60C3; STF11NM50N; STF11N65M2; STP11N65M2SP00021630 3; SPA07N60C3; ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SPA07N60C3IN-ND,SPA0 7N60C3,INFINFSPA07N6 0C3XKSA1,SPA07N60C3I N,SPA07N60C3XK,2156- SPA07N60C3XKSA1,SP00 0216303 Base Product Number: SPA07N60 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1095542-SPA07N60C3XKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-31
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SPA08N50C3; SPA06N60C3; SPP06N60C3; STF11NM50N; STF11N65M2; STP11N65M2SP000216303; SPA07N60C3;
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPA07N60C3IN-ND,SPA07N60C3,INFINFSPA07N60C3XKSA1,SPA07N60C3IN,SPA07N60C3XK,2156-SPA07N60C3XKSA1,SP000216303
Base Product Number: SPA07N60
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPA07N60C3XKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPA07N60C3XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPA07N60C3XKSA1
MOSFET N-CH 650V 7.3A TO220-FP

MOSFET N-CH 650V 7.3A TO220-FP

Supplier's Site
Mosfet, N Channel, 650V, 7.3A, To-220Fp-3; Channel Type Infineon - 62M0114 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 650V, 7.3A, To-220Fp-3; Channel Type Infineon
62M0114
Mosfet, N Channel, 650V, 7.3A, To-220Fp-3; Channel Type Infineon 62M0114
MOSFET, N CHANNEL, 650V, 7.3A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 650V, 7.3A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SPA07N60C3XKSA1-ND SPA07N60C3XKSA1 278-SPA07N60C3XKSA1 SPA07N60C3XKSA1 1095542-SPA07N60C3XKSA1 SPA07N60C3XKSA1 62M0114
Product Name Single FETs, MOSFETs Single FETs, MOSFETs 650V 7.3A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 650V, 7.3A, To-220Fp-3; Channel Type Infineon
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack Tube PG-TO22-3 SOT3 TO-220; TO-220-3 Full Pack TO-3; TO-220
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 600 volts
IDSS 7300 milliamps 7300 milliamps
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