Infineon Technologies AG P-Channel Power MOSFET SPD30P06P G

Description
P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of Features Enhancement mode Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, Halogen-free Qualified according to AEC Q101 Potential Applications Power Management Functions Motor control On-board charger DC-DC Consumer Logic level translators Power MOSFET gate drivers Other switching applications Applications Cordless power tools and outdoor power equipment Cordless vacuum cleaners On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPT007N06N | N-Channel Power MOSFET IAUS300N08S5N011T | Automotive MOSFET AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes IPP65R190CFD7A | Automotive MOSFET BSS138W | Small signal/small power MOSFET BAS70-05W | Schottky Diodes SAK-TC332LP-32F300F AA AURIX™ Family – TC33xLP TLS202B1MB V50 | OPTIREG™ linear voltage regulators (LDO) IPD80R2K7C3A | Automotive MOSFET TLF35584QVVS1 | OPTIREG™ PMIC 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET BSP316P | Small signal/small power MOSFET IPT007N06N | N-Channel Power MOSFET IAUS300N08S5N011T | Automotive MOSFET AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes IPP65R190CFD7A | Automotive MOSFET BSS138W | Small signal/small power MOSFET BAS70-05W | Schottky Diodes SAK-TC332LP-32F300F AA AURIX™ Family – TC33xLP TLS202B1MB V50 | OPTIREG™ linear voltage regulators (LDO) 1 2 3 4
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of Features Enhancement mode Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, Halogen-free Qualified according to AEC Q101 Potential Applications Power Management Functions Motor control On-board charger DC-DC Consumer Logic level translators Power MOSFET gate drivers Other switching applications Applications Cordless power tools and outdoor power equipment Cordless vacuum cleaners On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPT007N06N | N-Channel Power MOSFET IAUS300N08S5N011T | Automotive MOSFET AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes IPP65R190CFD7A | Automotive MOSFET BSS138W | Small signal/small power MOSFET BAS70-05W | Schottky Diodes SAK-TC332LP-32F300F AA AURIX™ Family – TC33xLP TLS202B1MB V50 | OPTIREG™ linear voltage regulators (LDO) IPD80R2K7C3A | Automotive MOSFET TLF35584QVVS1 | OPTIREG™ PMIC 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET BSP316P | Small signal/small power MOSFET IPT007N06N | N-Channel Power MOSFET IAUS300N08S5N011T | Automotive MOSFET AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes IPP65R190CFD7A | Automotive MOSFET BSS138W | Small signal/small power MOSFET BAS70-05W | Schottky Diodes SAK-TC332LP-32F300F AA AURIX™ Family – TC33xLP TLS202B1MB V50 | OPTIREG™ linear voltage regulators (LDO) 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
P-Channel Power MOSFET - SPD30P06P G - Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
SPD30P06P G
P-Channel Power MOSFET SPD30P06P G
P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of Features Enhancement mode Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, Halogen-free Qualified according to AEC Q101 Potential Applications Power Management Functions Motor control On-board charger DC-DC Consumer Logic level translators Power MOSFET gate drivers Other switching applications Applications Cordless power tools and outdoor power equipment Cordless vacuum cleaners On-board charging (OBC) for electric vehicles Designers who used this product also designed with IPT007N06N | N-Channel Power MOSFET IAUS300N08S5N011T | Automotive MOSFET AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes IPP65R190CFD7A | Automotive MOSFET BSS138W | Small signal/small power MOSFET BAS70-05W | Schottky Diodes SAK-TC332LP-32F300F AA AURIX™ Family – TC33xLP TLS202B1MB V50 | OPTIREG™ linear voltage regulators (LDO) IPD80R2K7C3A | Automotive MOSFET TLF35584QVVS1 | OPTIREG™ PMIC 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET BSP316P | Small signal/small power MOSFET IPT007N06N | N-Channel Power MOSFET IAUS300N08S5N011T | Automotive MOSFET AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes IPP65R190CFD7A | Automotive MOSFET BSS138W | Small signal/small power MOSFET BAS70-05W | Schottky Diodes SAK-TC332LP-32F300F AA AURIX™ Family – TC33xLP TLS202B1MB V50 | OPTIREG™ linear voltage regulators (LDO) 1 2 3 4

P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.


Summary of Features

  • Enhancement mode
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, Halogen-free
  • Qualified according to AEC Q101

Potential Applications

  • Power Management Functions
  • Motor control
  • On-board charger
  • DC-DC
  • Consumer
  • Logic level translators
  • Power MOSFET gate drivers
  • Other switching applications

Applications

  • Cordless power tools and outdoor power equipment
  • Cordless vacuum cleaners
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • IPT007N06N |
    N-Channel Power MOSFET
  • IAUS300N08S5N011T |
    Automotive MOSFET
  • AIMDQ75R040M1H |
    Silicon Carbide MOSFET Discretes
  • IPP65R190CFD7A |
    Automotive MOSFET
  • BSS138W |
    Small signal/small power MOSFET
  • BAS70-05W |
    Schottky Diodes
  • SAK-TC332LP-32F300F AA
    AURIX™ Family – TC33xLP
  • TLS202B1MB V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • IPD80R2K7C3A |
    Automotive MOSFET
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • 1EDN8550B |
    Gate driver ICs
  • BSS84PW |
    Small signal/small power MOSFET
  • BSP316P |
    Small signal/small power MOSFET
  • IPT007N06N |
    N-Channel Power MOSFET
  • IAUS300N08S5N011T |
    Automotive MOSFET
  • AIMDQ75R040M1H |
    Silicon Carbide MOSFET Discretes
  • IPP65R190CFD7A |
    Automotive MOSFET
  • BSS138W |
    Small signal/small power MOSFET
  • BAS70-05W |
    Schottky Diodes
  • SAK-TC332LP-32F300F AA
    AURIX™ Family – TC33xLP
  • TLS202B1MB V50 |
    OPTIREG™ linear voltage regulators (LDO)

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30P06P G - 111499-SPD30P06P G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30P06P G
111499-SPD30P06P G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30P06P G 111499-SPD30P06P G
Manufacturer: Infineon Technologies Win Source Part Number: 111499-SPD30P06P G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 4V @ 1.7mA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1535pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 21.5A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 111499-SPD30P06P G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 4V @ 1.7mA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1535pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 21.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
Automotive 60V 30A DPAK MOSFET Transistor
278-SPD30P06P G
Automotive 60V 30A DPAK MOSFET Transistor 278-SPD30P06P G
Trans MOSFET P-CH 60V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Product overview: SPD30P06P G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 30A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 30A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD30P06P G can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 60V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Product overview: SPD30P06P G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 30A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 30A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD30P06P G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 8986864P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8986864P
MOSFETs 8986864P
MOSFET P-Channel 60V 30A TO252-3

MOSFET P-Channel 60V 30A TO252-3

Supplier's Site
MOSFETs - 1658011 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1658011
MOSFETs 1658011
MOSFET P-Channel 60V 30A TO252-3

MOSFET P-Channel 60V 30A TO252-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-Ch -60V -30A DPAK-2

MOSFET P-Ch -60V -30A DPAK-2

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SPD30P06P G 111499-SPD30P06P G 278-SPD30P06P G 8986864P 1658011 SPD30P06P G
Product Name P-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD30P06P G Automotive 60V 30A DPAK MOSFET Transistor MOSFETs MOSFETs MOSFET
Polarity P-Channel; P P-Channel; P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0750 ohms
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type TO-252 (DPAK); PG-TO252-3 SOT3; TO-252 (DPAK); PG-TO252-3 Tape and Reel TO-252 (DPAK); TO-252 TO-252 (DPAK); Dpak (to-252)
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