The Si4435DY is a P-channel HEXFET power MOSFET in an SO-8 package, designed for battery and load management applications. It has a drain-source voltage rating of -30V, a continuous drain current of -8.0A at 25°C, and a maximum on-resistance of 0.025Ω at -10V gate-source voltage. The device supports a pulsed drain current of -50A and dissipates up to 2.5W at 25°C. Thermal resistance from junction to ambient is 50°C/W. The package complies with EIA-481 and EIA-541 standards, and the part is suitable for vapor phase, infrared, or wave soldering. Junction and storage temperatures range from -55°C to +150°C.
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Benefits
Applications
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P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
| Infineon Technologies AG | DigiKey | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | SI4435DY | SI4435DY-ND |
| Product Name | P-Channel Power MOSFET | Single FETs, MOSFETs |
| Polarity | P-Channel; P | P-Channel |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0200 ohms |
