Infineon Technologies AG 500V-950V N-Channel Power MOSFET SPP08N80C3

Description
Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™ quality CoolMOS™ technology has been manufactured by Infineon since 1998 Benefits High efficiency and power density Outstanding cost/performance High reliability Ease-of-use Potential Applications Consumer PC power Adapter Lighting Solar Applications LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
Request a Quote Datasheet
Description
Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™ quality CoolMOS™ technology has been manufactured by Infineon since 1998 Benefits High efficiency and power density Outstanding cost/performance High reliability Ease-of-use Potential Applications Consumer PC power Adapter Lighting Solar Applications LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - SPP08N80C3 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
SPP08N80C3
500V-950V N-Channel Power MOSFET SPP08N80C3
Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™ quality CoolMOS™ technology has been manufactured by Infineon since 1998 Benefits High efficiency and power density Outstanding cost/performance High reliability Ease-of-use Potential Applications Consumer PC power Adapter Lighting Solar Applications LED strips and signage EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview

Replacement for CoolMOS™ C3 is CoolMOS™ P7

800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.


Summary of Features

  • Low specific on-state resistance (RDS(on)*A)
  • Very low energy storage in output capacitance (Eoss) @400V
  • Low gate charge (Qg)
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ technology has been manufactured by Infineon since 1998

Benefits

  • High efficiency and power density
  • Outstanding cost/performance
  • High reliability
  • Ease-of-use

Potential Applications

  • Consumer
  • PC power
  • Adapter
  • Lighting
  • Solar

Applications

  • LED strips and signage

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Supplier's Site Datasheet
Singapore
800V 8A TO220 MOSFET Transistor
2088-SPP08N80C3
800V 8A TO220 MOSFET Transistor 2088-SPP08N80C3
MOSFETs N-Ch 800V 8A TO220-3 CoolMOS C3 Product overview: SPP08N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 8A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPP08N80C3 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 800V 8A TO220-3 CoolMOS C3 Product overview: SPP08N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 8A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPP08N80C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP08N80C3 - 042833-SPP08N80C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP08N80C3
042833-SPP08N80C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP08N80C3 042833-SPP08N80C3
Manufacturer: Infineon Technologies Win Source Part Number: 042833-SPP08N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 3.9V @ 470μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1100pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 650 mOhm @ 5.1A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 042833-SPP08N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 470μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 650 mOhm @ 5.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SPP08N80C3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SPP08N80C3
Single FETs, MOSFETs SPP08N80C3
SPP08N80 - 800V COOLMOS N-CHANNE

SPP08N80 - 800V COOLMOS N-CHANNE

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3

MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SPP08N80C3 2088-SPP08N80C3 042833-SPP08N80C3 SPP08N80C3 SPP08N80C3
Product Name 500V-950V N-Channel Power MOSFET 800V 8A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP08N80C3 Single FETs, MOSFETs MOSFET
Polarity N-Channel; N N-Channel N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.6500 ohms
QG 40 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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