The SN7002I is an N-channel enhancement mode MOSFET in a PG-SOT23-3 package, designed for industrial applications. It has a drain-source voltage rating of 60 V, a maximum on-state resistance of 5 Ω at V_GS = 10 V and 7.5 Ω at V_GS = 4.5 V, and a continuous drain current of 0.2 A. The device supports a pulsed drain current of 0.8 A and is rated for a maximum junction temperature of 150 °C. It features a thermal resistance of 350 K/W, RoHS compliance, and halogen-free construction per IEC 61249-2-21. The part is qualified for industrial use according to JEDEC JESD47, JESD22, and J-STD-020 standards.
N-channel enhancement mode small signal transistor for industrial and consumer applications in SOT-23-3 package
The N-channel enhancement mode MOSFET SN7002I in SOT-23-3 package features VDS 60 V and RDS(on),max 5 Ohm (at VGS 10 V).
With an optimal price/performance ratio and small footprint packages, Infineon's small signal and small power MOSFETs are the best fit for a wide range of applications and circuits. These include low voltage drives, linear battery charger, battery protection, load switches, DC-DC converters, reverse polarity protection and many more.
Small signal/small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. Enhancement and depletion-mode options, as well as Industry qualification make Infineon's portfolio the best fit for industry and consumer markets.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SN7002I |
| Product Name | Power - MOSFET (Si/SiC) - Small Signal/Small Power MOSFET - SN7002I |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 5 ohms |
