P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
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Manufacturer: Infineon Technologies
Win Source Part Number: 128770-SPD09P06PL G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.7A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
MOSFETs P-Ch -60V 9.7A DPAK-2 Product overview: SPD09P06PL G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 9.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 9.7A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPD09P06PL G can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SPD09P06PL G | 128770-SPD09P06PL G | 2088-SPD09P06PL G | SPD09P06PL G |
| Product Name | P-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD09P06PL G | -60V 9.7A DPAK MOSFET Transistor | MOSFET |
| Polarity | P-Channel; P | P-Channel; P-Channel | P-Channel | |
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.2500 ohms | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-252 (DPAK); PG-TO252-3 | SOT3; TO-252 (DPAK); PG-TO252-3 | Reel |