MOSFET N-CH 600V 20.7A TO220-3 Product overview: SPP20N60C3XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPP20N60C3XKSA1 can be used for catalog matching and distributor lookup.
N-Channel 600V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
Manufacturer: Infineon Technologies
Win Source Part Number: 192421-SPP20N60C3XKS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.7A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 1mA
Max Gate Charge: 114nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 13.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 20.7A TO220-3
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 20.7A, 208W, TO-220, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:600V, CONTINUOUS DRAIN CURRENT ID:20.7A, ON RESISTANCE RDS(ON):0.16OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 600V, 20.7A, 208W, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-Ch 650V 20.7A TO220-3
MOSFET N-CH 600V 20.7A TO220-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Rochester Electronics | RS Components, Ltd. | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SPP20N60C3XKSA1 | 448-SPP20N60C3XKSA1-ND | 192421-SPP20N60C3XKSA1 | SPP20N60C3XKSA1 | SPP20N60C3XKSA1 | 2584038 | 74186577 | 95W8643 | SPP20N60C3XKSA1 | SPP20N60C3XKSA1 |
| Product Name | 600V 20.7A TO220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP20N60C3XKSA1 | Single FETs, MOSFETs | MOSFETs | Transistor | Mosfet, N-Ch, 600V, 20.7A, 208W, To-220; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | |||||||
| PD | 208 milliwatts | 208000 milliwatts | 208000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
