The SPP11N80C3 is a CoolMOS,Ñ¢ N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage of 800 V and a continuous drain current rating of 11 A at a case temperature of 25 ¬8C. It has a low on-state resistance of 450 mOc at 7.1 A and 10 V gate voltage, which contributes to efficient power management. The device is characterized by a low gate charge of 64 nC, making it suitable for fast switching applications. It operates within a temperature range of -55 ¬8C to 150 ¬8C and is compliant with RoHS standards. The SPP11N80C3 is packaged in a PG-TO220-3 case, facilitating through-hole mounting. This MOSFET is qualified according to JEDEC standards, ensuring reliability for industrial applications.
MOSFET N-CH 800V 11A TO220-3 Product overview: SPP11N80C3XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPP11N80C3XKSA1 can be used for catalog matching and distributor lookup.
SPP11N80 - CoolMOS N-Channel Power MOSFET
N-Channel 800V 11A (Tc) 156W (Tc) Through Hole PG-TO220-3-1
Win Source Part Number: 1278370-SPP11N80C3XK
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 63 pct.
REACH Status: REACH Unaffected
Mfr: Infineon Technologies
Other Names: 2156-SPP11N80C3XKSA1
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 800V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3
MOSFET N-CH 800V 11A TO220-3
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SPP11N80C3XKSA1 | SPP11N80C3XKSA1 | SPP11N80C3XKSA1-ND | 1278370-SPP11N80C3XKSA1 | 47Y8131 | SPP11N80C3XKSA1 | SPP11N80C3XKSA1 |
| Product Name | 800V 11A TO220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 800V, 11A, To-220; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 800 volts | ||||||
| PD | 156 milliwatts |
