Infineon Technologies AG Low Noise Amplifier LNA ICs BGA416

Description
BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz - Ultra high reverse isolation, 60 dB at 900 MHz - Low noise figure, F50ω = 1.2 dB at 900 MHz - On chip bias circuitry, 5.5 mA bias current at VCC = 3 V - Typical supply voltage: 2.5 to 5.0 V - SIEGET®-25 technology - Pb-free (RoHS compliant) package Target Applications: - Buffer amplifier - LNAs - Oscillator active devices
Request a Quote Datasheet
Description
BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz - Ultra high reverse isolation, 60 dB at 900 MHz - Low noise figure, F50ω = 1.2 dB at 900 MHz - On chip bias circuitry, 5.5 mA bias current at VCC = 3 V - Typical supply voltage: 2.5 to 5.0 V - SIEGET®-25 technology - Pb-free (RoHS compliant) package Target Applications: - Buffer amplifier - LNAs - Oscillator active devices
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Low Noise Amplifier LNA ICs - BGA416 - Infineon Technologies AG
Neubiberg, Germany
Low Noise Amplifier LNA ICs
BGA416
Low Noise Amplifier LNA ICs BGA416
BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz - Ultra high reverse isolation, 60 dB at 900 MHz - Low noise figure, F50ω = 1.2 dB at 900 MHz - On chip bias circuitry, 5.5 mA bias current at VCC = 3 V - Typical supply voltage: 2.5 to 5.0 V - SIEGET®-25 technology - Pb-free (RoHS compliant) package Target Applications: - Buffer amplifier - LNAs - Oscillator active devices

BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing.
Summary of Features:
- GMA = 23 dB at 900MHz
- Ultra high reverse isolation, 60 dB at 900 MHz
- Low noise figure, F50Ω = 1.2 dB at 900 MHz
- On chip bias circuitry, 5.5 mA bias current at VCC = 3 V
- Typical supply voltage: 2.5 to 5.0 V
- SIEGET®-25 technology
- Pb-free (RoHS compliant) package
Target Applications:
- Buffer amplifier
- LNAs
- Oscillator active devices

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Amplifiers
Product Number BGA416
Product Name Low Noise Amplifier LNA ICs
RoHS Compliant RoHS
Frequency Range ? to 3000 MHz
Minimum Gain 23 dB
Maximum Gain 23 dB
Unlock Full Specs
to access all available technical data

Similar Products

RF and Wireless - RF Amplifiers - BGB717L7ESDE6327 - Shenzhen Shengyu Electronics Technology Limited
Specs
Frequency Range 76 to 108 MHz
Minimum Gain ? to 12 dB
Maximum Gain 12 dB
View Details
Low Noise Amplifier LNA ICs - BGA748L16 - Infineon Technologies AG
Specs
RoHS Compliant RoHS
Frequency Range 940 MHz
Minimum Gain 16.5 dB
View Details
RF Amplifiers - BGA735N16E6327XTSA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Applications UMTS
Frequency Range 800 to 2100 MHz
View Details
2 suppliers
RF Amplifiers - BGM15LA12E6327XTSA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Applications Mobile / Wireless Systems; LTE, W-CDMA
Frequency Range 700 to 1000 MHz
View Details
3 suppliers