Infineon Technologies AG LTE / 3G LNAs BGA7H1N6

Description
Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 12.5 dB - Low noise figure: 0.60 dB - Low current consumption: 4.7 mA - Operating frequencies: 2300 - 2690 MHz - Supply voltage: 1.5 V to 3.3 V - Digital on/off switch (1V logic high level) - Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) - B7HF Silicon Germanium technology - RF output internally matched to 50 ω - Only 1 external SMD component necessary - 2kV HBM ESD protection (including AI-pin) - Pb-free (RoHS compliant) package
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Description
Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 12.5 dB - Low noise figure: 0.60 dB - Low current consumption: 4.7 mA - Operating frequencies: 2300 - 2690 MHz - Supply voltage: 1.5 V to 3.3 V - Digital on/off switch (1V logic high level) - Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) - B7HF Silicon Germanium technology - RF output internally matched to 50 ω - Only 1 external SMD component necessary - 2kV HBM ESD protection (including AI-pin) - Pb-free (RoHS compliant) package
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
LTE / 3G LNAs - BGA7H1N6 - Infineon Technologies AG
Neubiberg, Germany
LTE / 3G LNAs
BGA7H1N6
LTE / 3G LNAs BGA7H1N6
Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 12.5 dB - Low noise figure: 0.60 dB - Low current consumption: 4.7 mA - Operating frequencies: 2300 - 2690 MHz - Supply voltage: 1.5 V to 3.3 V - Digital on/off switch (1V logic high level) - Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) - B7HF Silicon Germanium technology - RF output internally matched to 50 ω - Only 1 external SMD component necessary - 2kV HBM ESD protection (including AI-pin) - Pb-free (RoHS compliant) package

Silicon Germanium Low Noise Amplifier for LTE
Summary of Features:
- Insertion power gain: 12.5 dB
- Low noise figure: 0.60 dB
- Low current consumption: 4.7 mA
- Operating frequencies: 2300 - 2690 MHz
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package

Supplier's Site Datasheet
Low Noise Amplifier MMICs - LTE / 3G LNAs - BGA7H1N6 - Infineon Technologies AG
Neubiberg, Germany
Low Noise Amplifier MMICs - LTE / 3G LNAs
BGA7H1N6
Low Noise Amplifier MMICs - LTE / 3G LNAs BGA7H1N6
Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA, HSPA + and LTE also distant from the next base station and enables highest network efficiency by reduced transmission power and lowest bit error rates. The MMICs contain gain-switching, biasing and matching circuitry and thus allowing an easy implementation into the RF design. A wide variety of solutions from single to quad LNAs in very small standard IC packages optimized for the standard cellular frequency bands addresses the individual customer needs. Highly linear LNAs with bypass enable MIMO (Multiple-Input/Mult iple-Output) reception also on the main path with high power transmit signals. Infineon LNAs are used in many reference designs of chipset vendors but can also be found in customized solutions to compensate losses from the antenna to the transceiver in complex multi-band frond end implementations or long signal lines from distributed antennas - or to improve the own system performance beyond the standard. Customer benefits: Low NF, high linearity and low current consumption that enhances the signal receiving sensitivity and improves data transfer rate Have Pin-to-pin compatible families that products can easily be implemented in new project based on same PCB design Smallest package in the industry, increased system integration and reduce the product power consumption. No bond wires that avoid the interference caused by bond wires and further reduce the product dimension High linearity LNAs for use in transmit path (MIMO systems)

Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE

Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA, HSPA + and LTE also distant from the next base station and enables highest network efficiency by reduced transmission power and lowest bit error rates. The MMICs contain gain-switching, biasing and matching circuitry and thus allowing an easy implementation into the RF design. A wide variety of solutions from single to quad LNAs in very small standard IC packages optimized for the standard cellular frequency bands addresses the individual customer needs. Highly linear LNAs with bypass enable MIMO (Multiple-Input/Multiple-Output) reception also on the main path with high power transmit signals. Infineon LNAs are used in many reference designs of chipset vendors but can also be found in customized solutions to compensate losses from the antenna to the transceiver in complex multi-band frond end implementations or long signal lines from distributed antennas - or to improve the own system performance beyond the standard.

Customer benefits:

  • Low NF, high linearity and low current consumption that enhances the signal receiving sensitivity and improves data transfer rate
  • Have Pin-to-pin compatible families that products can easily be implemented in new project based on same PCB design
  • Smallest package in the industry, increased system integration and reduce the product power consumption.
  • No bond wires that avoid the interference caused by bond wires and further reduce the product dimension
  • High linearity LNAs for use in transmit path (MIMO systems)
Supplier's Site Datasheet
Laguna Hills, CA, United States
RF Amplifiers - BGA7H1N6
819310-BGA7H1N6
RF Amplifiers - BGA7H1N6 819310-BGA7H1N6
Manufacturer: Infineon Technologies Win Source Part Number: 819310-BGA7H1N6 Categories: Uncategorized Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 819310-BGA7H1N6
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Infineon Technologies AG Infineon Technologies AG Win Source Electronics
Product Category RF Amplifiers RF Amplifiers RF Amplifiers
Product Number BGA7H1N6 BGA7H1N6 819310-BGA7H1N6
Product Name LTE / 3G LNAs Low Noise Amplifier MMICs - LTE / 3G LNAs RF Amplifiers - BGA7H1N6
RoHS Compliant RoHS RoHS
Frequency Range 2300 to 2690 MHz 2300 to 2690 MHz
Minimum Gain 12.5 dB
Maximum Gain 12.5 dB 12.5 dB
Noise Figure 0.6000 dB 0.6000 dB
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