Silicon Germanium Low Noise Amplifier for LTE
Summary of Features:
- Insertion power gain: 12.5 dB
- Low noise figure: 0.60 dB
- Low current consumption: 4.7 mA
- Operating frequencies: 2300 - 2690 MHz
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA, HSPA + and LTE also distant from the next base station and enables highest network efficiency by reduced transmission power and lowest bit error rates. The MMICs contain gain-switching, biasing and matching circuitry and thus allowing an easy implementation into the RF design. A wide variety of solutions from single to quad LNAs in very small standard IC packages optimized for the standard cellular frequency bands addresses the individual customer needs. Highly linear LNAs with bypass enable MIMO (Multiple-Input/Mult
Customer benefits:
Manufacturer: Infineon Technologies
Win Source Part Number: 819310-BGA7H1N6
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
| Infineon Technologies AG | Infineon Technologies AG | Win Source Electronics | |
|---|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers | RF Amplifiers |
| Product Number | BGA7H1N6 | BGA7H1N6 | 819310-BGA7H1N6 |
| Product Name | LTE / 3G LNAs | Low Noise Amplifier MMICs - LTE / 3G LNAs | RF Amplifiers - BGA7H1N6 |
| RoHS Compliant | RoHS | RoHS | |
| Frequency Range | 2300 to 2690 MHz | 2300 to 2690 MHz | |
| Minimum Gain | 12.5 dB | ||
| Maximum Gain | 12.5 dB | 12.5 dB | |
| Noise Figure | 0.6000 dB | 0.6000 dB |